Dr. Aleksandr Malik

Correo:

amalik@inaoep.mx

Extensión: 1410

Información Curricular:

Doctorado obtenido en: Chernivtsi State University, en 1980.
Título de Tesis: "Investigations of Optical and Photoelectric properties in Layered Semiconductor Structures"
Maestría en Ciencias Obtenido en: Chernivtsi State University, en 1971.
Título de Tesis: "Determining the Optical Constants of Metals by the Kramers-Kroning Method"
Líneas de Investigación:


Microelectrónica

Proyectos:

Tesis:

Publicaciones Recientes:

J. Plaza Castillo, A. Torres Jacome, O. Malik, and N. Torres Lop “Very shallow boron junctions in Si by implantation and SOD difusión obtained by RTP” enviado al “Microelectronics Journal” enviado en abril, 2007.

O. Malik, V. Grimalsky, J. De la Hidalga-W, “Spray deposited heavy doped indium oxide film as an efficient hole supplier in silicon light-emitting diodes. Journal of Non-Crystalline Solids”, V. 352, No 3, Pp. 1461-1465, 2006 (Netherlands, Elsevier Publ.).

O. Malik, V. Grimalsky, J. De la Hidalga-W, P. Pasos-Canul, “Current gain in silicon near infrared optical sensor containing multiple low-high junctions”, Sensors and Actuators A, Physical, v.130-131, pp. 202-207 (2006).

O. Malik, V. Grimalsky, J. De la Hidalga-W, “Behavior of an optical sensor based on non-ideal silicon capacitors: From amplification to generation”, Sensors and Actuators A, Physical, v.130-131, pp. 208-213 (2006).

A.I. Martínez, L. Huerta, J.M. O-Rueda de Leóon, D. Acosta, O. Malik, and M. Aguilar, “Physicochemical characteristics of fluorine doped tin oxide films”, Journal of Physics D: Applied Physics, v.39, pp. 5091-5096 (2006).

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