Nombre:

Edmundo Gutiérrez Domínguez

Correo:

edmundo@inaoep.mx

Extensión:

1424

Información curricular:

Doctorado obtenido en: Universidad Católica de Leuven, Bélgica en 1993.

Título de tesis: "Electrical performance of submicron CMOS technologies from 300 K down to 4.2 K"

Maestría en Ciencias obtenida en: Universidad Católica de Leuven, Bélgica en 1989.

Título de Tesis: "D.C. performance of submicron CMOS inverters"

Licenciatura obtenida en: Universidad Autónoma de Puebla

Líneas de investigación:

Física de materiales y dispositivos semiconductores, incluyendo transistores MOS, sensores magnéticos y térmicos.

Interferencia termo-electro-magnética en transistores nanométricos MOS con óxidos de compuerta ultra delgados.

Caracterización, modelado y simulación de dispositivos semiconductores a temperaturas criogénicas.

Proyectos

CONACyT: “Efectos cuánticos y magnéticos en Si y SiGe”. Terminado en diciembre de 2008.

Comunidad Europea: “Emisión e interferencia electromagnética en tecnologias CMOS nanométricas de circuitos integrados”. 2009-2011.

Intel: “Addressing silicon innovation through characterization, modeling, analysis, and design of compact-space and energy-efficient chip-to-chip signaling, on-die RFI scanning, and self-calibrated on-die temperature solutions for computing platforms”. 2006-

Tesis dirigidas

"Development of a Process for Local Oxidation in Silicon", Ignacio Zaldivar H., May 1995. INAOE, Puebla, Mexico.

  "A silicon based photo detector for 4.2 K operation", Margarita Tecpoyotl T., March 1997. INAOE, Puebla, Mexico.

 Doctorado

 “Analysis and modeling of high-freqency substrate losses in CMOS integrated circuits”, by Emmanuel Torres R., in co-supervision with Reydezel Torres T. INAOE, Diciembre 15, 2008.

 “Non-stationary effects of the space charge in semiconductor structures”, By Abel García Barrientos, INAOE, Diciembre 15, 2006.

"3D Modeling and simulation of a magnetic sensor MAGFET", by Rodrigo Rodriguez, thesis co-supervised with S.Selberherr, Technical University of Vienna, Austria. Mayo 2003.

“Development of a high-frequency MOSFET simulator based on macromodelling”, by Rodrigo Rodríguez-T., Co-supervised with Dr. Arturo Sarmiento-R.. Marzo 2002.

“Analysis, modeling, design and testing of a magnetic detector based on a SiGe alloy”, by Pedro J. Gárcia R.. Supervised by Dr. Edmundo Gutiérrez. Agosto 2000.

  Publicaciones recientes:

 Edmundo A. Gutiérrez-D., M. J Deen, and C. Claeys, “Low Temperature Electronics: Physics, Devices, Circuits, and Applications”, Academic Press, New York, 2001.

E. Torres-R., R. Torres-T., and E. A. Gutiérrez-D., “Analysis of the impact of the drain-junction tunneling effect on microwave MOSFET from S-parameter measurement”, Solid-State Electronics, Vol. 53, 2009, pp. 145-149.

Edmundo A. Gutiérrez-D., P. J. Garcia, J. Martinez, F. Guarin, “Magnetic field induced gate leakage current in 65nm nMOS transistors”, IEEE ESSDERC 2009 Conference, Athens, Greece, September 2009.

A. Garcia-B., V. Grimalsky, and Edmundo A. Gutiérrez-D., “Nonstationary effects of the space charge in semiconductor structures”, Journal of Applied Physics, Vol. 105, 074501, 2009.

E. Torres-R., E. A. Gutiérrez-D., and R. Torres-T., “Analysis of the band-to-band tunneling effect in 65 nm nFET’s”, presented at the 38th IEEE ESSDERC Conference, September 15-19, Edinburgh, 2008.

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