inaoe.edu.mx
INAOE | Electrónica | Directorio | Investigadores | Edmundo Gutiérrez Domínguez
Asignar puntaje:
 

 

 

Dr. Edmundo antonio

Gutiérrez Domínguez

sni nivel 2

 

Correo Electrónico: edmundo@inaoep.mx

Teléfono: +52 222 266 31 00 ext. 1424

Oficina: 1424

 

 


Información curricular:

Doctorado obtenido en: Universidad Católica de Leuven, Bélgica en 1993.
Título de tesis: "Electrical performance of submicron CMOS technologies from 300 K down to 4.2 K"

Maestría en Ciencias obtenida en: Universidad Católica de Leuven, Bélgica en 1987.
Título de Tesis: "Design and fabrication of a CMOS Analog-to-Digital Converter"

Licenciatura obtenida en: Universidad Autónoma de Puebla, en 1986.

Título de Tesis: "Diseño de un convertidor analógico/digital CMOS"


Líneas de investigación/RESEARCH ACTIVITIES:

  • Física, caracterización, y modelado de  de dispositivos semiconductores, particularmente enfocado a transistores FET de tecnologías de 45, 28, y 14 nanómetros (nm). Efecto de campo magnético y temperatura en transistores FET manométricos, y física de degradación y confiabilidad. / Physics, characterization, and modeling of semiconductor devices. The research is focused on Field-Effect-Transistor (FET) based devices of 45, 28, and 14 nanometers (nm). The physics and models of degradation and reliability are also studied as a function of temperature and magnetic field at low and high frequencies.

Proyectos/RESEARCH PROJECTS:
 

  • “Physics and modeling of RF degradation of 45 nm SOI technologies”. Project started since 2016 under the IBM-INAOE research agreement, and continued to year 2020 under the GlobalFoundries-INAOE research contract.

  • “Optimization, monitoring, and automation for the oil extraction process with an hydraulic jet pump”. Research and technology development under the INAOE-Universidad Veracruzana-Nuvoil agreement. 2017-2020.

  • “Trapping/detrapping at the oxide-semiconductor interface of nanometric FET devices under the action of a magnetic field”. Research collaboration under the INAOE-Universidad de Granada (Spain) agreement, 2017-2018.

 

últimas tesis dirigidas:

Doctorado/PhD:

Gabriela Alejandra Rodríguez Ruiz, “Tridimensional simulation of time-dependent electromagnetic effects in nano-scaled semiconductor devices”, February 20, 2015.

Victor Hugo Vega González, “Analysis of quantum electromagnetic effects in low dimensional MOSFEts”, June 2014.

Erika Póndigo de los Ángeles, “Characterization and modeling of the multidirectional gate current in nano-scales MOS tranaistors”, June 2014.

 

Maestría/M.Sc:

Uriel Alberto Díaz Reynoso, “Cálculo de la corriente de tuneleo y el efecto de la temperatura usando la ecuación de Schröinger, INAOE, 19 de mayo, 2017.

Oscar Vicente Huerta González, “Hole and electron contribution to the magneto-transport of nano-scaled MOS transistors”- February 19, 2014.

 

Publicaciones recientes/selected list of recent publications:

 

  • Mikael Östling, Edmundo Gutiérrez, Daniel Alquier, and Eddy Simoen, “An editorial on the recent advances in high and low temperature electronics”, in Semiconductor Science and Technology, Volume 32, Number 8, Special Issue on High and Low Temperature Electronics, pp. 1-3, July 2017.

  • E. A. Gutiérrez-D., V. H. Vega-G., P. J. García-R., and O. V. Huerta-G., “Memory and negative-resistance effects in a strained metal-gate high-k n-type field-effect-transistor from 375K down to 77K”, Semicond. Sci. Technol., 31, (2016), 124003, pp. 1-10.

  • Edmundo A. Gutiérrez-D., book: “Nano-Scaled Semiconductor Devices, Physics, Modelling, Characterisation, and Societal Impact”, The IET Press, London, UK, 2016. 454 pages, ISBN: 978-184919-8.

  • G. A. Rodríguez-R., E. A. Gutiérrez-D., L. A. Sarmiento-R., Z. Stanojevic, H. Kosina, F. Guarin, and P. García-R., “Experimental and simulation results of magnetic modulation of gate oxide tunneling current in nano-scaled MOS transistors”, IEEE Electron Device Letters, Vol. 36 , No. 4 , April, 2015, pp. 387-389

  • G. A. Rodríguez-R., E. A. Gutiérrez-D., L. A. Sarmiento-R., Z. Stanojevic, H. Kosina, F. Guarin, and P. García-R., “Thermo-magnetic effects in nano-scaled MOSFET: an experimental, modeling, and simulation approach”, IEEE Journal of the Electron Devices Society, Vol, 3, No. 2, 2015, pp. 78-84.

 

 Libros/Books:

  • Edmundo A. Gutiérrez-D. (Editor and co-author), with 6 more co-authors, “Nano-Scaled Semiconductor Devices; Physics,Modeling and Characterization”. to be published by IET, England, April 2016.

 

 página personal:


Última modificación :
06-02-2018 a las 16:11 por Laura Toxqui Olmos

MULTIMEDIA

Dirección: Luis Enrique Erro # 1, Tonantzintla, Puebla, México C.P. 72840 | Teléfono: (222) 247. 27.42 | Contacto: secelec@inaoep.mx

 

Esta obra está licenciada bajo una Licencia Creative Commons Atribución-No Comercial-Sin Obras Derivadas 2.5 México

Creative Commons License