Electrónica

Dr. Joel Molina Reyes

Investigador Titular C
Investigador Nacional Nivel 2

Correo electrónico: jmolina@inaoep.mx

Extensión: 2105

 

Información Curricular:

Doctorado obtenido en Tokyo Institute of Technology (Advanced Applied Electronics):
“A Study on the Reliability of Metal Gate–La₂O₃ Thin Film Stacked Structures”

Maestría en Ciencias obtenida en Instituto Nacional de Astrofísica. Óptica y Electrónica (Microelectronics):
“A Study of Dielectric–Silicon Structures and their Application to Ion Sensors ISFET–type”

Licenciatura obtenida en Universidad Veracruzana (Comunicaciones):
Grado obtenido por mejor promedio académico (summa cum laude).

 

Líneas de Investigación:

• Atomic layer deposition for advanced logic, memory and sensing technologies.
• Advanced materials and devices for enhanced photocatalysis.
• Advanced materials and devices for enhanced biosensing.
• Electron device design and process integration (FEOL/BEOL).
• Microelectronics, Nanoelectronics.
• Nanobioelectronics.
• Physics and technology of advanced electron materials and devices.
• Reliability of advanced electron materials and devices.
• Superconducting qubits and cryoelectronics.

 

Proyectos:

• Singapore University of Technology and Design (2023-2026). Singapore
  "Nanoscale characterization of advanced high-k nanomaterials for ReRAM/FeRAM".
• Institute of Materials Research & Engineering, A*STAR (2022-2026). Singapore
  "2D quantum materials for valley-pseudospin qubits ".
• Vellore Institute of Technology (2023-2025). India
  “Development of electron materials and devices for logic and memory technologies”.
• Nikkiso Corporation Ltd., (2020-2025). Japan
  "Bacteria inactivation in water sources using UV-LED light and TiO2 nanostructures".
• IEEE Electron Device Society (2023-2025). USA
  “Virtual laboratory for remote measurement of electron devices”.
• Space Charge LLC (2023-2025). USA
  “Process integration of solid-state battery into BEOL stages of an integrated circuit”.
• Escuela Politécnica Nacional (2023-2025). Ecuador
  “Development of integrated Schottky-barrier devices for ultra-fast electronics”.
• Centro de Nanociencias y Nanotecnología CNyN-UNAM (2023-2025).
  "Yttria-stabilized zirconia (YSZ) for application in solid-state batteries".
• Centro de Investigación Científica y de Educación Superior de Ensenada (2022-2025).
  "Integrated resonating structures for RF sensing of emerging contaminants in water".
• Universidad de las Américas Puebla UDLAP (2020-2025).
  “Synthesis of metal-oxide nanoparticles with enhanced photocatalytic activity”.

 

Tesis Dirigidas Recientes: 

Posdoctorado:

• Anaí Zavala Franco, “Spray coating of TiO2-based thin films for the enhanced inactivation of SARS-Cov-2 virus and additional pathogenic microorganisms”. INAOE (2021).
• Héctor Rubén Guzmán Carrillo, “TiO2 and ZnO-based thin films as coatings on plastic substrates for the enhanced inactivation of SARS-Cov-2 virus”. INAOE (2021).

Doctorado:

• Daniel Rocha Aguilar, “Fabrication and characterization of transmon-based superconducting qubits with long coherence times”. INAOE (in-process).
• Arely Vázquez Jiménez, “Non-volatile ReRAM, FeRAM memory devices and their integration into 1T1R/1T1F cell for 3D embedded memory architectures”. INAOE (in-process).
• Maria Alejandra Romero Morán, “Inactivation of Common Bacteria in Water Sources using Nanostructured Materials with Enhanced Photocatalytic Activity”. INAOE (2020).
• Héctor Manuel Uribe Vargas, “Modeling of the Carrier Transport Properties of Nanostructured Devices with Application to Advanced Logic and Memory Technologies”. INAOE (2018).
• Erika Póndigo de Los Ángeles, “Modeling and Characterization of Multi-Directional Gate Current Components in Nano-Scaled MOSFETs”, co-directed with Dr. Edmundo Gutierrez. INAOE (2014).

Maestría:

• Joseph Alberto Estrada Correa, “Development of superconducting Josephson junctions and integrated coplanar waveguides based on titanium nitride”. INAOE (in-process).
• Daniel Rocha Aguilar, “Development of superconducting Josephson junctions and integrated coplanar waveguides based on aluminum”. INAOE (2023).
• Arely Vázquez Jiménez, “Development of advanced Schottky-barrier thin-film transistors with low-thermal budget”. INAOE (2023).
• Omar López, “A Study on FET Devices based on Schottky Barrier and Metal-Gate/high-k Stacked Thin-Films”. INAOE (2017).
• Alba Arenas Hernandez, "Synthesis and Characterization of Titanium Dioxide Nanotubes". co-directed with Dr. Carlos Zuñiga. INAOE (2016).
• Natiely Hernandez Sebastian, "Fabrication and Characterization of Microelectrodes on Flexible Substrates for Electrical Stimulation of the Cornea". co-directed with Dr. Wilfrido Calleja. INAOE (2015).
• René Valderrama, “Characterization of Memristive Devices based on MIM Structures and Fabricated at Low Temperature”. INAOE (2013).
• Berni Manolo Pérez, “Design, Fabrication and Electrochemical Characterization of ISCAP Sensing Integrated Devices for pH Sensing Applications”, co-directed with Dr. Alfonso Torres. INAOE (2013).
• Erick Guerrero, “Conditioning Circuit Architectures for Chemical Sensors”, co-directed with Dr. Maria Teresa Sanz. INAOE (2012). 
• Rafael Ortega, “HfO2 Nanoparticles as Charge Trapping Layer for Memory Devices”, co-directed with Dr. Alfonso Torres. INAOE (2012). 
• Ana Luz Muñoz, “Spin-On-Glass as Gate Dielectric in MOS Devices and as a Matrix for Embedding HfO2-Nanoparticles”, co-directed with Dr. Alfonso Torres. INAOE (2010).

 

Publicaciones Recientes:

2024

• Development of Schottky barrier field-effect transistors (SB-MOSFET) with ultra-low thermal budget.
  J. Molina, A. Vazquez and A.M. Cuellar
  Physica Scripta, vol. 99, 035914, pp. 1-13 (2024)

• Carrier conduction mechanisms in MIS capacitors with ultra-thin Al2O3 at cryogenic temperatures.
  D. Rocha and J. Molina
  Applied Physics Letters, vol. 124, no. 1, 013503, pp. 1-7 (2024).

• Low temperature passivation of silicon surfaces for enhanced performance of Schottky-barrier MOSFET.
  J. Molina and A.M. Cuellar
  Nanotechnology, vol. 35, no. 10, 105701, pp. 1-10 (2024).

• A Voltage-Driven Transport Model to Identify Ion Migration as the Rate-Limiting Step in Memristive Switching.
  J.L. Vazquez, J. Molina, O.E. Contreras and H. Tiznado
  Advanced Electronic Materials, vol. 10, no. 1, 2300608, pp. 1-14 (2024).

2023

• Standardized Figures of Merit for Proper Benchmarking of Photocatalytic Inactivation of Bacteria Using Thin Films Based on TiO2 Nanostructures.
  A. Romero and J. Molina
  Small, vol. 19, no. 44, 2302710, pp. 1-9 (2023).

• Modeling of Conduction Mechanisms in Ultrathin Films of Al2O3 Deposited by ALD.
  S. Salas, J. Molina, J. Martínez, R M. Woo, A.L. Herrera and F. Lopez
  Electronics, vol. 12, no. 4, 903, pp. 1-10 (2023).

• Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy.
  A. Ranjan, H. Xu, C. Wang, J. Molina, X. Wu, H. Zhang, L. Sun, J. Chu and K.L. Pey
  Applied Materials Today, vol. 31, 101739, pp. 1-10 (2023).

2022

• Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO2 Using Defect Nanospectroscopy.
  A. Ranjan, F.M. Puglisi, J. Molina, P. Pavan, S.J. O’Shea, N. Raghavan and K.L. Pey
  ACS Applied Electronic Materials, vol. 4, No. 8, pp. 3909-3921 (2022).

• Electrostatically charged rutile TiO2 surfaces with enhanced photocatalytic activity for bacteria inactivation.
  A. Romero, A. Zavala, J.L. Sanchez, M.A. Mendez and J. Molina
  Catalysis Today, vol. 392-393, pp. 154-166 (2022).

2021

• Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects.
  F.L. Aguirre, A. Ranjan, N. Raghavan, A. Padovani, S.M. Pazos, N. Vega, N. Müller, M. Debray, J. Molina, K.L. Pey and F. Palumbo
  Applied Physics Express, vol. 14, no. 12, 121001, pp. 1-4 (2021).

• Influence of Laser Modulation Frequency on the Performance of Terahertz Photoconductive Switches on Semi-Insulating GaAs Exhibiting Negative Differential Conductance.
  G. Paz, C.G. Trevino, J. Molina, A. Romero, E. Cervantes, J. Mateos and T. Gonzalez
  IEEE Transactions on Terahertz Science and Technology, vol. 11, No. 5, pp. 591-597 (2021).

• Influence of selected reactive oxygen species on photocatalytic activity of TiO2/SiO2 composite coatings processed at low temperature.
  A. Romero, J.L. Sanchez and J. Molina
  Applied Catalysis B: Environmental, vol. 291, pp. 119685 (2021).

• On the Roughness Analysis of High-Index Silicon Wafers Using KOH-IPA Solutions.
  H. E. Martínez, F. J. De La Hidalga, C. Zúñiga, M. Moreno, J. Molina, N. Ramírez and W. Calleja
  ECS Journal of Solid State Science and Technology, 10, pp. 014002 (2021).

• Effect of Controlled Humidity on Resistive Switching of Multilayer VO2 devices.
  V. Rajaa, K. Hadiyala, A.K. Natha, L.R. Vianniea, P. Sonar, J. Molina and R. Thamankar
  Materials Science & Engineering B, 264, 114968 (2021).

2020

• Enhanced photocatalytic bacterial inactivation of atomic-layer deposited anatase-TiO2 thin films on rutile-TiO2 nanotubes.
  J. Molina, A. Romero and J.L. Sanchez
  Photochemical and Photobiological Sciences, Vol. 19, pp. 399-405 (2020).

• Study on the photocatalytic activity of titanium dioxide nanostructures: nanoparticles, nanotubes and ultra-thin films.
  J. Molina, A. Romero, H. Uribe, B. Lopez, J.L. Sanchez, E. Ortega, A. Ponce, A. Morales, F. Lopez and C. Zuniga
  Catalysis Today, vol. 341, pp. 2-12 (2020).

• Analytical drain current model for a-SiGe:H thin film transistors considering density of states.
  S.S. Rodriguez, F.L. Huerta, A.L.H. May, J. Molina and J.M. Castillo
  Electronics, vol. 9 (6), pp. 1016 (2020).

• NiSi2 as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO2 thin films.
  J. Molina, T. Hoshii, S. Ohmi, H. Funakubo, A. Hori, I. Fujiwara, H. Wakabayashi, K. Tsutsui and K. Kakushima
  Japanese Journal of Applied Physics, vol. 59, SGGB06 (2020).

• MIM capacitors as simple test vehicles for the DC/AC characterization of ALD-Al2O3 with auto-correction of parasitic inductance.
  E.M. Pascual, G. Mendez, H. Uribe, R. Torres and J. Molina
  Microelectronics Reliability, vol. 104, pp. 113516 (2020).

 

Libros/capítulos de libros:

• Book Chapter: Advanced device characterization techniques
  in Nano-Scaled Semiconductor Devices:Physics, Modelling, Characterisation, and Societal Impact.
  E.A. Gutierrez, Stewart E. Rauch, J. Molina and E.A. Miranda.
  The Institution of Engineering and Technology. ISBN: 978-1-84919-930-8 (2016).

 

Propiedad intelectual:

• Non-Volatile Storage Device, Non-Volatile Storage Element, and Manufacturing Method for said Non-Volatile Storage Element.
  Inventors: K. Kakushima, H. Funakubo, S.O. Ohmi, J. Molina, I. Fujiwara, A. Hori, T. Shimizu, Y. Nakamura and T. Mimura.
  Country: United States of America
  Application number: 17781803
  Application date: 04.12.2020
  Publication number: 20230012093
  Publication date: 12.01.2023

• Non-Volatile Storage Device, Non-Volatile Storage Element, and Manufacturing Method for said Non-Volatile Storage Element.
  Inventors: K. Kakushima, H. Funakubo, S.O. Ohmi, J. Molina, I. Fujiwara, A. Hori, T. Shimizu, Y. Nakamura and T. Mimura.
  Country: Japan
  Application number: PCT/JP2020/045325
  Application date: 04.12.2020
  Publication number: WO/2021/112247
  Publication date: 10.06.2021

 

Página Personal:

http://www-elec.inaoep.mx/~jmolina/