Electrónica

Dr. Joel Molina Reyes

Investigador Titular B
Investigador Nacional Nivel 1

Correo electrónico: jmolina@inaoep.mx

Extensión: 2105

 

Información Curricular:

Doctorado obtenido en: Tokyo Institute of Technology
Título de Tesis: “A Study on the Reliability of Metal Gate–La₂O₃ Thin Film Stacked Structures”

 

Maestría en Ciencias obtenida en: Instituto Nacional de Astrofísica. Óptica y Electrónica
Título de Tesis: “A Study of Dielectric–Silicon Structures and their Application to Ion Sensors ISFET–type”

 

Licenciatura obtenida en: Universidad Veracruzana
Título de Tesis: Exención por promedio académico.

 

Líneas de Investigación:

• Gate stack engineering for advanced CMOS technology.
• Microelectronics, Nanoelectronics.
• Physics and technology of nanostructured electron devices.
• Physics of carrier transport, conduction mechanisms and charge trapping in    advanced electron devices.
• Physics, chemistry and engineering of solid-state interfaces.
• Physical, chemical, electrical, thermal, magnetical and reliability characterization of materials and advanced electron devices (XPS, XRD, TEM, SEM, EDS, FTIR, AFM, EBSD, I-V, C-V, Reliability, etc).
• Advanced integrated circuit fabrication technology (FEOL/BEOL) and processing of materials and devices.
• Advanced transistor architectures: MOSFET, FinFET, DG-FET, Hall-FET, IGFET, TFT, etc.
• Development of ultra-thin films for advanced logic, memory and sensing technologies.
• Development of photocatalytic nanostructures for bacteria inactivation.
• Development of photocatalytic nanostructures for gas sensing and simultaneous energy conversion/storage.
• Design, fabrication and characterization of electronic materials for biological and medical applications.

 

Proyectos:

• University of Texas at Dallas. "Gate Stack Engineering for the Next-Generation CMOS ". 2018-2019.
• Singapore University of Technology and Design. "Nanoscale Characterization of High-k". 2016-2019.
• CNyN-UNAM. "Yttria-Stabilized Zirconia (YSZ) for Application in Solid-State Batteries". 2017-2018.
• CINVESTAV. “Thermodynamic Stability of HfO₂ Films after Doping with Al₂O₃/ZrO₂ by ALD”. 2014-2017.
• UDLAP. "Field-Effect Devices for Sensing DNA Hybridizing Events". 2018-2019.
• UDLAP. “Synthesis of Metal-Oxide Nanoparticles with Enhanced Photocatalytic Activity”. 2013-2018.
• Universidad Autónoma de Sinaloa. “Application of Stacked Ultra-Thin Films in Optometry”. 2018-2019.
• Universidad Autónoma Metropolitana. “Development of Integrated ISFET Sensors for pH Measurement in Water Samples Intended for Human Consumption”. 2014-2016.
• Universidad Veracruzana. “Application of Integrated ISFET Sensors for Ruminal pH and Temperature Measurements in Local Cattle being Adapted to Climate Change”. 2014-2015.
• CONACyT. "Fundamentals, Characterization and Application of ALD Materials". 2017. DADC2017/279695.
• CONACyT. "Taller Nacional de MEMS con Aplicaciones en Ingeniería Biomédica". 2016-2018.
• CONACyT. “Physical and Chemical Structure of Nanofilms to their Functional Properties”. CB2012/179304.
• CONACyT. “ALD of High-k Materials and their Characterization for Nano-CMOS”. CB2009/135027.
• CONACyT. “Electromagnetic Emission & Interference in Nanometer MOS IC Technology”. CB2008/100028.
• CONACyT. “Structure of HfO₂ Nano Thin-Films”. CB2007/080285.
• Space Charge LLC. "Nanoscale Electrical Energy Storage and Microchip Fabrication". 2016-2017.
• Team Technologies. “Design and Fabrication of Integrated RF Switches”. 2012-2016.
• Freescale, Inc., “ISFETs with Integrated Membranes for Selective Ion Detection”. 2011-2012.
• Freescale, Inc. “FET Devices for Biomedical Applications”. 2010-2012.
• Intel. “High-k Gated MOS Devices for MOHOS-type NVM Devices”. 2010-2011.

 

Tesis Dirigidas Recientes: 

Doctorado:

• Maria Alejandra Romero Morán, “Inactivation of Common Bacteria in Water Sources using Nanostructured Materials with Enhanced Photocatalytic Activity”. INAOE (2016-2019).IN PROCESS.
• Héctor Manuel Uribe Vargas, “Modeling of the Carrier Transport Properties of Nanostructured Devices with Application to Advanced Logic and Memory Technologies”. INAOE (2018).
• Erika Póndigo de Los Ángeles, “Modeling and Characterization of Multi-Directional Gate Current Components in Nano-Scaled MOSFETs”, co-directed with Dr. Edmundo Gutierrez. INAOE (2014).

 

Maestría:

• Omar López, “A Study on FET Devices based on Schottky Barrier and Metal-Gate/high-k Stacked Thin-Films”. INAOE (2017).
• Alba Arenas Hernandez, "Synthesis and Characterization of Titanium Dioxide Nanotubes". co-directed with Dr. Carlos Zuñiga. INAOE (2016).
• Natiely Hernandez Sebastian, "Fabrication and Characterization of Microelectrodes on Flexible Substrates for Electrical Stimulation of the Cornea". co-directed with Dr. Wilfrido Calleja. INAOE (2015).
• René Valderrama, “Characterization of Memristive Devices based on MIM Structures and Fabricated at Low Temperature”. INAOE (2013).
• Berni Manolo Pérez, “Design, Fabrication and Electrochemical Characterization of ISCAP Sensing Integrated Devices for pH Sensing Applications”, co-directed with Dr. Alfonso Torres. INAOE (2013).
• Erick Guerrero, “Conditioning Circuit Architectures for Chemical Sensors”, co-directed with Dr. Maria Teresa Sanz. INAOE (2012). 
• Rafael Ortega, “HfO2 Nanoparticles as Charge Trapping Layer for Memory Devices”, co-directed with Dr. Alfonso Torres. INAOE (2012). 
• Ana Luz Muñoz, “Spin-On-Glass as Gate Dielectric in MOS Devices and as a Matrix for Embedding HfO2-Nanoparticles”, co-directed with Dr. Alfonso Torres. INAOE (2010).

 

Publicaciones Recientes:

2018

• Rectifying Characteristics of Resonant Tunneling MIS Devices Using Ultra-Thin High-k Oxides Deposited by ALD.
  H. Uribe-Vargas, J. Molina, E. Ortega and A. Ponce
  IEEE Electron Device Letters, Vol. 39, No. 9, pp. 1461-1464 (2018).

• Resonant tunneling MIIIS diode based on intrinsic quantum-well formation of ultra-thin atomic layered films after band-offset engineering.
  J. Molina, H. Uribe-Vargas, E. Ortega and A. Ponce
  Applied Surface Science, Vol. 458, pp. 166-171 (2018).

• Study on the photocatalytic activity of titanium dioxide nanostructures: nanoparticles, nanotubes and ultra-thin films.
  J. Molina, A. Romero-Moran, H. Uribe-Vargas, B. Lopez, J.L. Sanchez, E. Ortega, et al.
  Catalysis Today (2018, In Press). DOI: 10.1016/j.cattod.2018.05.033

• Gate modeling of metal–insulator–semiconductor devices based on ultra-thin atomic-layer deposited TiO2.
  H. Uribe-Vargas, J. Molina, A. Romero-Moran, E. Ortega and A. Ponce
  Journal of Materials Science: Materials in Electronics (2018, In Press). DOI: 10.1007/s10854-018-9240-8

• Parameter extraction of gate tunneling current in metal–insulator–semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3.
  H. Uribe-Vargas and J. Molina
  Journal of Materials Science: Materials in Electronics (2018, In Press). DOI: 10.1007/s10854-018-9104-2

• Physical and electrical characterization of yttrium-stabilized zirconia (YSZ) thin films deposited by sputtering and atomic-layer deposition.
  J. Molina, H. Tiznado, G. Soto, M. Vargas, D. Dominguez, E. Murillo, D. Sweeney and J. Read
  Journal of Materials Science: Materials in Electronics (2018, In Press). DOI: 10.1007/s10854-018-8909-3

• Design and Electrochemical Characterization of Ion-Sensitive Capacitors with ALD Al2O3 as the Sensitive Dielectric.
  J. Molina
  IEEE Sensors Journal, Vol. 18, pp. 231-236 (2018).

 

2017

• Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments.
  J. Molina and L. Hernandez-Martinez
  Complexity, Vol. 2017, Article ID 8263904, (2017).

• Accurate modeling of gate tunneling currents in Metal-Insulator-Semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3 and post-metallization annealing.
  J. Molina, H. Uribe-Vargas, R. Torres, P.G. Mani-Gonzalez and A. Herrera-Gomez.
  Thin Solid Films, Vol. 638 pp. 48-56 (2017).

• Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations.
  R. Thamankar, F.M. Puglisi, A. Ranjan, N. Raghavan, K. Shubhakar, J. Molina, et al.
  Journal of Applied Physics, Vol. 122, 024301 (2017).

• Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature.
  J. Molina, R. Torres, A. Ranjan and K.L. Pey.
  Materials Science in Semiconductor Processing, Vol. 66, pp. 191-199 (2017).

• Influence of SiH4 and pressure on PECVD preparation of silicon films with subwavelength structures.
  W.H. Montero, C. Zuñiga, A, Itzmoyotl, J. Molina and L.E. Serrano
  Journal of Vacuum Science and Technology B, Vol. 35, 011204 (2017).

 

2016

• Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM.
  A. Ranjan, N. Raghavan, J. Molina, S. J. O'Shea, K. Shubhakar, and K. L. Pey .
  Microelectronics Reliability, Vol. 64, pp. 172-178 (2016).

• CAFM based spectroscopy of stress-induced defects in HfO2 with experimental evidence of the clustering model and metastable vacancy defect state.
  A. Ranjan, N. Raghavan, K. Shubhakar, R. Thamankar, J. Molina, S. J. O'Shea, M. Bosman, et al.
  Reliability Physics Symposium (IRPS), 2016 IEEE International, Vol. 1, pp. 7A41-7A47 (2016).

• Conductance-to-Current-Ratio-Based Parameter Extraction in MOS Leakage Current Models.
  A.O. Conde, A.S. Gonzalez, R.T. Torres, J. Molina, R.S. Murphy and F.J.G. Sanchez
  IEEE Transactions on Electron Devices, Vol. 63, No. 10, pp. 3844-3850 (2016).

• Modeling a MIM capacitor including series resistance and inductance for characterizing nanometer high-K dielectric films.
  D.M. Cortes, R. Valderrama, R. Torres and J. Molina
  Microwave and Optical Technology Letters, Vol. 58, Iss. 11, pp. 2599-2602 (2016).

• Performance of ultra-thin HfO2-based MIM devices after oxygen modulation and post-metallization annealing in N2.
  J. Molina, R. Thamankar and K.L. Pey
  Physica Status Solidi A, Vol. 213, Iss. 7, pp. 1807-1813 (2016).

• A Generic MEMS Fabrication Process Based on a Thermal Budget Approach.
  C.R.B. Alvarez, M.L. Aranda, A.T. Jacome, M.M. Moreno, J. Molina, C. Zuniga and W. Calleja.
  Journal of Electronics Cooling and Thermal Control, Vol. 6, No. 2, pp. 97-107 (2016).

• Hermetic capacitive pressure sensors for biomedical applications.
  D.D. Alonso, M.M. Moreno, C. Zuniga, J. Molina, W. Calleja, J.C. Cisneros, et al.
  Microelectronics International, Vol. 33 Iss: 2, pp. 79-86 (2016).

• Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy.
  R. Thamankar, N. Raghavan, J. Molina, F.M. Puglisi, S.J. O’Shea, K. Shubhakar, L. Larcher, et al.
  Journal of Applied Physics, Vol. 119, No. 8, 084304 (2016).

• pH ISFET sensor with PVTA compensation.
  L.A. Carrillo, G. Espinosa, B.M. Perez and J. Molina.
  Electronics Letters, Vol. 52, No.1, pp. 15-17 (2016).

 

2014

• Study of the Chemical and Morphological Characteristics of Al₂O₃ and HfO₂ Surfaces after Immersion in Time-Dependent pH Solutions.
  J. Molina and B.M. Perez.
  ECS Transactions, Vol. 64, no. 1, pp. 3-9 (2014).

• Electrochemical Characterization of Ion-Sensitive Capacitors with ALD Al₂O₃ as the Sensitive Dielectric.
  B.M. Perez and J. Molina.
  ECS Transactions, Vol. 64, no. 1, pp. 239-243 (2014).

• Influence of the Surface Roughness of the Bottom Electrode on the Resistive-Switching Characteristics of Al/Al₂O₃/Al and Al/Al₂O₃/W Structures Fabricated on Glass at 300°C.
  J. Molina, R. Valderrama, C. Zuñiga, P. Rosales, W. Calleja, A. Torres, J. Hidalga and E. Guitiérrez.
  Microelectronics Reliability, Vol. 52, Iss. 12, pp. 2747-2753  (2014).

• Complex Permittivity Determination of Thin-Films Through RF-Measurements of a MIM Capacitor.
  S.C. Cejas, R. Torres, R. Valderrama and J. Molina.
  IEEE Microwave and Wireless Components Letters, Vol. 24, no. 11, pp. 805-807 (2014).

• Reduction in the Interface-States Density of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on High-Index Si (114) Surfaces by using an External Magnetic Field.
  J. Molina, J. Hidalga and E. Gutierrez.
  Journal of Applied Physics, Vol. 116, No. 6, 064510 (2014).

• Mechanical Characterization of Polysilicon Cantilevers using a Thermo-Mechanical Test Chip Fabricated with a Combined Bulk/Surface Micromachining Technique.
  W. Calleja, F. Quinones, J. Hidalga, M. Moreno, J. Molina and C. Zuniga.
  Results in Physics, Vol. 4, pp. 119-120 (2014).

• Carrier Photogeneration in Metal-Semiconductor Structures Using Thin Films of Rutile-Phase TiO₂ Nanoparticles.
  J. Molina, C. Zuniga, E. Gutierrez, E. Mendoza, J.L. Sanchez and E.R. Bandala.
  Int. J. on Advances in Systems and Measurements, Vol. 7, No. 1-2, pp. 34-43 (2014).

• Physical and electrical characterization of TiO₂ particles after high temperature processing and before and after UV irradiation.
  J. Molina, C. Zuniga, M. Moreno, W. Calleja, P. Rosales, R. Ambrosio, et al.
  Canadian Journal of Physics, Vol. 92, No. 7-8, pp. 832-837 (2014).

• Planarized Ambipolar a-SiGe:H Thin-Film Transistors: Influence of the Sequence of Fabrication Process.
  M. Dominguez, P. Rosales, A. Torres, F. Flores, J. Molina, M. Moreno, J. Luna and A. Orduña.
  Solid State Electronics, Vol. 99, pp. 45-50 (2014).

• Effects of Germane Flow Rate in Electrical Properties of a-SiGe:H films for Ambipolar Thin-Film Transistors.
  M. Dominguez, P. Rosales, A. Torres, F. Flores, J. Molina, M. Moreno, J. Luna and A. Orduña.
  Thin Solid Films, Vol. 562, pp. 260-263 (2014).

• Memristance Effect of Metal-Insulator-Metal Structures using Al₂O₃ Film as Active Layer for Emergent Memory Devices.
  J. Molina, R. Valderrama, W. Calleja, P. Rosales, C. Zuniga, E. Gutierrez, j. Hidalga and A. Torres.
  Surfaces and Vacuum, Vol. 27, No. 1, pp. 1-6 (2014).

• Low-Temperature Processing of Thin Films based on Rutile TiO₂ Nanoparticles for UV Photocatalysis and Bacteria Inactivation.
  J. Molina, J.L. Sanchez, C. Zuniga, E. Mendoza, R. Cuahtecontzi, G. Garcia, E. Gutiérrez, et al.
  Journal of Materials Science, Vol. 49, no. 2, pp. 786-793 (2014). 

 

Libros:

• Book Chapter: Advanced device characterization techniques
  in Nano-Scaled Semiconductor Devices:Physics, Modelling, Characterisation, and Societal Impact.
  E.A. Gutierrez, Stewart E. Rauch, J. Molina and E.A. Miranda.
  The Institution of Engineering and Technology. ISBN: 978-1-84919-930-8 (2016).

 

Página Personal:

http://www-elec.inaoep.mx/~jmolina/