Programa

Miércoles 1 de octubre

10.00-11.30
Dr. Carlos Aristóteles De La Cruz Blas
Universidad Pública de Navarra
España

HIGH PERFORMANCE TUNABLE GM-C CMOS CONTINUOUS-TIME FILTERS

In this presentation, novel analog design strategies are introduced to implement low-power low-voltage transconductance capacitor (GM-C) filters. The strategies will be presented on two dimensions. The first one based on transconductor design will provide a review of different techniques to increase its performances working with low supply voltages and power consumption. Here, it will be commented techniques using Floating-Gate (FG), Quasi-Floating-Gate (QFG) transistors, and bulk driven transistors. The second dimension will discuss topology arrangement of transcoductors for improving the main filter parameters. In this last approach the FG transistor can be used conveniently simplifying the filter blocks, reducing power consumption, without linearity penalization. Measurement results together with second order effects are analyzed and provided to fully explore the potential of the discussed circuits and systems in the scenario of low-power low-voltage applications.

 

11.30-13.00
Dr. Edmundo A. Gutierrez
INAOE
México

Se presenta un resumen de los últimos avances en materiales y dispositivos semiconductores realizados por universidades y compañias en Europa, Asia, y Estados Unidos. En particular se muestra el estado del arte y la proyección mas allá de los 5 nanómetros (unos 20 átomos), y sus aplicaciones potenciales en los sectores de la computación, el automotriz, la electrónica flexible, y los sistemas inteligentes e inalámbricos.
Se agrega una nota sobre el impacto que la electrónica tuvo en el descubrimiento del bosón de Higgs en el CERN.

 

Jueves 2 de Octubre

10.00-11.30
Dr. Maciej Ogorzalek
Jagiellonian University Krakow,
Poland

3D Integrated Circuit design - basic approaches and new challenges

The most significant challenge for continued integration of microelectronic systems is energy efficiency. 3D heterogeneous stacking of diverse circuit blocks is one of the most promising solutions.

Building of an integrated circuit in 3D geometry possibly offers very significant shortening of interconnects and also allows for building new types of Systems-on-Chip (SoC) containing blocks of new types. The lecture presents the three-dimensional integrated circuits (3D lCs) consisting of multiple silicon layers integrated vertically connected by through silicon vias (TSVs).

Advantages and challenges of current 3D TSV-based technologies together with the 3D SoC architecture, energy efficiency, technological feasibility are presented.
We will also look at possible integration of new types of building blocks, new devices and materials in the system including heterogeneous layers on chip containing such devices as energy scavengers and energy storing devices including hyper-capacitors and micro-batteries.

 

11.30-13.00
Dr. Alfonso Torres Jácome
INAOE
México

Más allá de la Ley de Moore

Desde principio de los años 70´s , la fortaleza de la industria de semiconductores ha sido su habilidad de seguir la Ley de Moore, siendo esta le motor de un circulo virtuoso: a través del escalamiento, se obtiene una mejor relación funcionamiento/costo, que resulta en un crecimiento exponencial del mercado de semiconductores. La industria se encuentra ahora por la creciente importancia de una nueva tendencia, More than Moore" (MtM),  mediante la que nuevo valor se agrega a dispositivos mediante al incorporación de funcionalidades que no necesariamente escalan de acuerdo a la Ley de Moore. Se tratará de explicar que es MtM y que oportunidades ofrece esta nueva perspectiva de desarrollo de la industria electrónica.

 

Viernes 3 de Octubre

10.00-11.30
Dr. Victor Avendaño
NMG NSD R&D-AMS DESIGN
Freescale Semiconductor, Inc.

Design and Verification for High Performance Integrated Circuits

 
Actual technologies allows higher circuit integration and complex systems in a single chip. The design of complex System on Chip requires specialized knowledge for transistor sizing,
On-chip Interconnection, complex circuit block structures, low power consumption, among other things. The design and verification procedures are critical to achieve a successful integrated circuit ready to be sold to the costumers. This presentation shows the design and verification flow established for a mixed-signal system and gives an insight of the current techniques for design and verification by using nanometric technologies.

 

11.30-13.00
Wilfrido Calleja Arriaga
INAOE
México

PolyMEMS INAOE® and Bulk Micromachining for MEMS: Some Challenges Behind the Roadmap

Microelectromechanical systems (MEMS) represents a technology that integrates miniaturized mechanical and electromechanical components (i.e., sensors, actuators, and microcomponents) that are made using Microelectronics techniques. MEMS devices have become an essential component in a wide range of applications, ranging from medical and military to consumer electronics. As MEMS technology is implemented in a growing range of areas, the reliability of MEMS devices is a concern. Understanding the failure mechanisms is a prerequisite for quantifying and improving the reliability of MEMS devices.
MEMS technology is perceived as a child or ancillary innovation of semiconductor electronics, much as how information technology is an ancillary innovation. But unlike semiconductor electronics, MEMS are not driven by a small set of applications, such as microprocessors and memories, but by literally hundreds if not thousands of unique devices and applications. The diversity of MEMS applications, manufacturing techniques, materials, and a lack of a unit cell such as the CMOS transistor, have resulted in MEMS technologies as being thought of as a limited Electronics fab rather than desired a high-volume Microsystems industry. Although there has been much earlier work in roadmapping MEMS technologies , the historical lack of cohesiveness in the industry has made it a challenge for obtaining industry-wide consensus on crosscutting needs.
Regarding this wide and varied Microtechnology world, in the final part, a technological innovation based on bulk micromachining and some applications are discussed.