Abstract: Mathematical models for electron devices have been around for several years within the work-flow of electronic design. Usually, these types of models have been recast at various levels of hierarchy as macro, functional or behavioral models, coded sometimes as ad-hoc re-usable blocks for electric simulation purposes.
In this talk, the attention is posed on the modeling of memristor as an emerging device that brings novel features for signal processing applications.Several memristor models in fully analytic or in semi-analytic form are developed. They are thoroughly studied in order to verify the most commonly featured fingerprints. The talk contains contributions from several authors as well as models developed at INAOE.
Furthermore, a series of applications are presented with the emphasis on open-acces implementations.
Finally a glimpse on hardware implementation of some memristor models is done.
Arturo Sarmiento Reyes earned his PhD in electronics from Delft University of Technology in the Netherlands in 1994 with a thesis on Multiple dc operating points in nonlinear circuits. He obtained his MSc in electronics from INAOE in 1983 with a thesis on Compensation schemes in active filters.
His areas of interest include computer-aided design, nonlinear circuits, analog design methodologies, and modeling and simulation techniques.
He has supervised 12 doctoral theses and nearly 40 master's theses, as well as approximately 20 bachelor's theses. He has published around 120 papers in international journals and conferences.